Characteristic of YBCO Thin Film for Current Limiting Device
نویسندگان
چکیده
منابع مشابه
Optimization of Annealing Process for Totally Printable High-current Superstrate CuInS2 Thin-Film Solar Cells
Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. A titanium dioxide blocking layer and an In2S3 buffer layer are deposited by the spray pyrolysis method. A CIS2 absorber layer is deposited by the spin coating method using CIS ink prepared by a 1-butylamine solvent-based solution at room temperature. To obtain optimum annealin...
متن کاملDry and Wet Wear Characteristic of TiO2 Thin Film Prepared by Magnetic Sputtering in Ringer Solution
In this research, a thin film of TiO2 was applied on AZ91D using the method of magnetic sputtering. Microstructure investigations were done using field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD). Wear resistance for the coating was investigated using the pin on the disk in the form of dry and in the Ringer's solution. After this test, the worn surface of the sampl...
متن کاملComparison of Power Dependence of Microwave Surface Resistance of Unpatterned and Patterned YBCO Thin Film
The effect of the patterning process on the nonlinearity of the microwave surface resistance RS of YBCO thin films is investigated. With the use of a sapphire dielectric resonator and a stripline resonator, the microwave RS of YBCO thin films was measured before and after the patterning process, as a function of temperature and the rf peak magnetic field in the film. The microwave loss was also...
متن کاملDefining , and for YBCO Thin Films
The accommodation field, , is generally defined to be the field at which the cross over from single vortex pinning to collective pinning occurs. It is determined from magnetization curves as the point where the plateau ends and it used as a convenient way of comparing the pinning properties of superconducting films. Similarly, the characteristic field, , can be obtained from magneto-optical (MO...
متن کاملProcess Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays
Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed. The p...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2006
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/43/1/221